Gallium oxide (Ga₂O₃) — especially in its most stable β phase — is attracting strong interest as an ultra-wide bandgap (UWBG) semiconductor with the potential to redefine power electronics beyond the limits of silicon carbide (SiC) and gallium nitride (GaN). With a bandgap energy of about 4.7–4.9 eV, significantly wider than typical wide bandgap materials […]
Read More