New housing solution TO-LL from UTC

UTC Ltd. distribution partner of TRS-STAR GmbH is introducing a new Mosfet/IGBT package solution for high power designs called TO-LL (TO-Leadless, HSOF-8). The housing is ideally suited for high density, high current application.

With its small size and low height (9.9 x 11.7 x 2.3 mm) and a drain-source creeping distance of 2.7 mm the package is ideally suited for replacing power-limited D2PAK/D2PAK-7 solutions or reducing component count in discrete designs for improved overall reliability. Further advantage is given by the ability for designing very compact high current circuitry which leads to less parasitic effects and EMI problems especially at application working at higher frequencies.

For optimized gate drive the package has a separate signal-source pin for reducing inductive effects at medium or higher switching frequencies ensuring safe switching and good switching performance.

The UTC TOLL-8B-Family is initiated with two high voltage Mosfet with 600V/130mOhm and 400V/180mOhm. Both transistors are fast switching types, have a low FOM (Figure of Merit) and high rugged avalanche characteristics.

Due to UTC´s broad portfolio of low and high voltage Mosfet chips and their high flexibility as a design and manufacturing company more part family members in different performance classes will be follow soon. Especially Trench Mosfet in the voltage range up to 80V with high current capability and low RDS(ON) will be released soon and can be a 1:1 drop-in replacement for existing solutions from established manufacturers. Depending on the customer demands UTC is also open for customized solutions.

For more specific information about UTCs TO-LL package solutions please contact your local TRS-STAR office.

Über die TRS-STAR GmbH

UTC Ltd. distribution partner of TRS-STAR GmbH is introducing a new Mosfet/IGBT package solution for high power designs called TO-LL (TO-Leadless, HSOF-8). The housing is ideally suited for high density, high current application.

With its small size and low height (9.9 x 11.7 x 2.3 mm) and a drain-source creeping distance of 2.7 mm the package is ideally suited for replacing power-limited D2PAK/D2PAK-7 solutions or reducing component count in discrete designs for improved overall reliability. Further advantage is given by the ability for designing very compact high current circuitry which leads to less parasitic effects and EMI problems especially at application working at higher frequencies.

#TRSSTAR #UTC #MOSFET #TOLL

Firmenkontakt und Herausgeber der Meldung:

TRS-STAR GmbH
Werner von Siemens Straße 1
76297 Stutensee
Telefon: +49 (7249) 95222-0
Telefax: +49 (7249) 95222-199
http://www.trs-star.com

Ansprechpartner:
Edgar Huber
Marcom360
Telefon: +49 (7083) 933745
E-Mail: edgar.huber@marcom360.de
Für die oben stehende Pressemitteilung ist allein der jeweils angegebene Herausgeber (siehe Firmenkontakt oben) verantwortlich. Dieser ist in der Regel auch Urheber des Pressetextes, sowie der angehängten Bild-, Ton-, Video-, Medien- und Informationsmaterialien. Die United News Network GmbH übernimmt keine Haftung für die Korrektheit oder Vollständigkeit der dargestellten Meldung. Auch bei Übertragungsfehlern oder anderen Störungen haftet sie nur im Fall von Vorsatz oder grober Fahrlässigkeit. Die Nutzung von hier archivierten Informationen zur Eigeninformation und redaktionellen Weiterverarbeitung ist in der Regel kostenfrei. Bitte klären Sie vor einer Weiterverwendung urheberrechtliche Fragen mit dem angegebenen Herausgeber. Eine systematische Speicherung dieser Daten sowie die Verwendung auch von Teilen dieses Datenbankwerks sind nur mit schriftlicher Genehmigung durch die United News Network GmbH gestattet.

counterpixel